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TDA1910 10w audio amplifier with muting description the tda 1910 is a monolithic integrated circuit in multiwatt? package, intended for use in hi-fi audio power applications, as high quality tv sets. the tda 1910 meets the din 45500 (d = 0.5%) guaranteed output power of 10w when used at 24v/4w. at 24v/8w the output power is 7w min. features: C muting facility C protection against chip over temperature C very low noise C high supply voltage rejection C low "switch-on" noise. the tda 1910 is assembled in multiwatt? package that offers: C easy assembly C simple heatsink may 1997 symbol parameter value unit v s supply voltage 30 v i o output peak current (non repetitive) 3.5 a i o output peak current (repetitive) 3.0 a v i input voltage 0 to + v s v v i differential input voltage 7v v 11 muting thresold voltage v s v p tot power dissipation at t case = 90 c20w t stg , t j storage and junction temperature -40 to 150 c absolute maximum ratings ordering numbers : TDA1910 (multiwatt11 vertical) TDA1910hs (multiwatt11 horizontal) multiwatt 11 test circuit C space and cost saving C high reliability (*) see fig. 13. 1/14
pin connection (top view) 2/14 schematic diagram TDA1910
test circuit (*) see fig. 13. muting circuit 3/14 TDA1910
4/14 symbol parameter value unit r th j-case thermal resistance junction-case max 3 c/w thermal data symbol parameter test condition min. typ. max. unit v s supply voltage 8 30 v v o quiescent output voltage v s = 18v v s = 24v 8.3 11.5 9.2 12.4 10 13.4 v i d quiescent drain current v s = 18v v s = 24v 19 21 32 35 ma v ce sat output stage saturation voltage i c = 2a 1 v i c = 3a 1.6 p o output power d = 0.5% v s = 18v v s = 24v v s = 24v f = 40 to 15,000hz r l = 4 w r l = 4 w r l = 8 w 6.5 10 7 7 12 7.5 w d = 10% v s = 18v v s = 24v v s = 24v f = 1 khz r l = 4 w r l = 4 w r l = 8 w 8.5 15 9 9.5 17 10 d harmonic distortion f = 40 to 15,000 hz v s = 18v r l = 4 w p o = 50 mw to 6.5w v s = 24v r l = 4 w p o = 50 mw to 10w v s = 24v r l = 8 w p o = 50 mw to 7w 0.2 0.2 0.2 0.5 0.5 0.5 % d intermodulation distortion v s = 24v r l = 4 w p o = 10w f 1 = 250 hz f2 = 8 khz (din 45500) 0.2 % v i input sensitivity f = 1 khz, v s = 18v v s = 24v v s = 24v r l = 4 w r l = 4 w r l = 8 w p o = 7 w p o = 12 w p o = 7.5w 170 220 245 mv v i input saturation voltage (rms) v s = 18v v s = 24v 1.8 2.4 v r i input resistance (pin 5) f = 1 khz 60 100 k w i d drain current v s = 24v f = 1 khz r l = 4 w p o = 12w rl = 8 w p o = 7.5w 820 475 ma electrical characteristics (refer to the test circuit, t amb = 25 c, r th (heatsink) = 4 c/w, unless otherwise specified) TDA1910
symbol parameter test condition min. typ. max. unit h efficiency v s = 24v f = 1 khz r l = 4 w p o = 12w r l = 8 w p o = 7.5w 62 65 % bw small signal bandwidth v s = 24v r l = 4 w p o = 1w 10 to 120,000 hz bw power bandwidth v s = 24v p o = 12w r l = 4 w d 5% 40 to 15,000 hz g v voltage gain (open loop) f = 1 khz 75 db g v voltage gain (closed loop) v s = 24v f = 1 khz r l = 4 w po = 1w 29.5 30 30.5 db e n total input noise r g = 50 w r g = 1k w ( ) r g = 10k w 1.2 1.3 1.5 3.0 3.2 4.0 m v r g = 50 w r g = 1k w ( ) r g = 10k w 2.0 2.0 2.2 5.0 5.2 6.0 m v s/n signal to noise ratio v s = 24v p o = 12w r l = 4 w r g = 10k w r g = 0 ( )97 103 105 db r g = 10k w r g = 0 ( )93 100 100 db svr supply voltage rejection v s = 24v rl = 4 w f ripple = 100 hz rg = 10 k w 50 60 db t sd thermal sjut-down case (*) temperature p tot = 8w 110 125 c muting function (refer to muting circuit) v t muting-off threshold voltage (pin 11) 1.9 4.7 v v t muting-on threshold voltage (pin 11) 0 1.3 v 6 v s r 1 input resistance (pin 1) muting off 80 200 k w muting on 10 30 w r 11 input resistance (pin 11) 150 k w a t muting attenuation r g + r 1 = 10 k w 50 60 db electrical characteristics (continued) note : ( ) weighting filter = curve a. ( ) filter with noise bandwidth: 22 hz to 22 khz. (*) see fig. 29 and fig. 30. 5/14 TDA1910
6/14 figure 1. quiescent output voltage vs. supply voltage figure 2. qui escent drain current vs. supply voltage figure 3. open loop fre- quency response figure 4. output power vs. supply voltage figure 5. output power vs. supply voltage figure 6. distortion vs. output power figure 7. distortion vs. output power figure 8. output power vs. frequency figure 9. output power vs. frequency TDA1910
figure 10. output power vs. input voltage figure 11. output power vs. input voltage figure 12. total input noise vs. source resistance figure 13. values of capaci- tor c x vs. bandwidth (bw) and gain (g v ) figure 14. supply voltage rejection vs. voltage gain figure 15. supply voltage rejection vs. source resistance figure 16. power dissipa- tion and efficiency vs. output power figure 17. power dissipa- tion and efficiency vs. output power figure 18. max power dissipation vs. supply voltage 7/14 TDA1910
8/14 application information figure 19. application circuit without muting figure 20. pc board and component lay-out of the circuit of fig. 19 (1:1 scale) figure 21. application circuit with muting performance (circuits of fig. 19 and 21) p o = 12w (40 to 15000 hz, d 0.5%) v s = 24v i d = 0.82a g v = 30 db TDA1910
application information (continued) figure 22. two position dc tone control (10 db boost 50 hz and 20 khz) using change of pin 1 resistance (muting function) figure 23. frequency re- sponse of the circuit of fig. 22 figure 24. 10 db 50 hz boos tone control using change of pin 1 resistance (muting function) figure 25. frequency re- sponse of the circuit of fig. 24 figure 26. squelch function in tv applications figure 27. delayed muting circuit 9/14 TDA1910
10/14 muting function the output signal can be inhibited applying a dc voltage v t to pin 11, as shown in fig. 28 figure 28 the input resistance at pin 1 depends on the threshold voltage v t at pin 11 and is typically. r 1 = 200 k w @ 1.9v v t 4.7v muting-off r1 = 10 w @ 0v v t 1.3v muting-on 6v v t v s referring to the following input stage, the possible attenuation of the input signal and therefore of the output signal can be found using the following expression. a t = v i v 5 = r g + r 5 r 1 r 5 r 1 where r5 @ 100 k w considering rg = 10 k w the attenuation in the muting-on condition is typically a t = 60 db. in the muting-off condition, the attenuation is very low, typically 1.2 db. a very low current is necessary to drive the thresh- old voltage v t because the input resistance at pin 11 is greater than 150 k w . the muting function can be used in many cases, when a temporary inhibition of the output signal is requested, for example: - in switch-on condition, to avoid preamplifier power-on transients (see fig. 27) - during commutations at the input stages. - during the receiver tuning. the variable impedance capability at pin 1 can be useful in many applications and we have shown 2 examples in fig. 22 and 24, where it has been used to change the feedback network, obtaining 2 differ- ent frequency responses. TDA1910
application suggestion the recommended values of the components are those shown on application circuit of fig. 21. different values can be used. the following table can help the designer. component raccom. value purpose larger than recommended value smaller than recommended value allowed range min. max. r g + r 1 10k w input signal imped. for muting operation increase of the atte- nuation in muting-on condition. decrease of the input sensitivity. decrease of the attenuation in muting on condition. r 2 3.3k w close loop gain setting. increase of gain. decrease of gain. increase quiescent current. 9 r 3 r 3 100 w close loop gain setting. decrease of gain. increase of gain. r 2 /9 r 4 1 w frequency stability danger of oscillation at high frequencies with inductive loads. p 1 20k w volume potentiometer. increase of the switch-on noise. decrease of the input impedance and of the input level. 10k w 100k w c 1 c 2 c 3 1 m f 1 m f 0.22 m f input dc decoupling. higher low frequency cutoff. c 4 2.2 m f inverting input dc decoupling. increase of the switch-on noise. higher low frequency cutoff. 0.1 m f c 5 0.1 m f supply voltage bypass. danger of oscillations. c 6 10 m f ripple rejection. increase of svr. increase of the switch-on time degradation of svr 2.2 m f 100 m f c 7 47 m f bootstrap. increase of the distor- tion at low frequency. 10 m f 100 m f c 8 0.22 m f frequency stability. danger of oscillation. c 9 2200 m f (r l = 4 w ) 1000 m f (r l = 8 w ) output dc decoupling. higher low frequency cutoff. 11/14 TDA1910
thermal shut-down the presence of a thermal limiting circuit offers the following advantages: 1) an overload on the output (even if it is perma- nent), or an above limit ambient temperature can be easily supported since the t j cannot be higher than 150 c. 2) the heatskink can have a smaller factor of safety compared with that of a conventional figure 29. output power and drain current vs. case temperature figure 30. output power and drain current vs. case temperature figure 31. maximum allow able power dissipation vs. ambient temperature mounting instructions the power dissipated in the circuit must be re- moved by adding an external heatsink. thanks to the multiwatt? package attaching the heatsink is very simple, a screw or a compression 12/14 circuit. there is no possibility of device damage due to high junction temperature. if for any reason, the junction temperature in- creases up to 150 c, the thermal shut-down simply reduces the power dissipation and the current consumption. the maximum allowable power dissipation de- pends upon the size of the external heatsink (i.e. its thermal resistance); fig. 31 shows this dissipable power as a function of ambient temperature for different thermal resistance. spring (clip) being sufficient. between the heatsink and the package it is better to insert a layer of silicon grease, to optimize the thermal contact; no electri- cal isolation is needed between the two surfaces. TDA1910
dim. mm inch min. typ. max. min. typ. max. a 5 0.197 b 2.65 0.104 c 1.6 0.063 d1 0.039 e 0.49 0.55 0.019 0.022 f 0.88 0.95 0.035 0.037 g 1.57 1.7 1.83 0.062 0.067 0.072 g1 16.87 17 17.13 0.664 0.669 0.674 h1 19.6 0.772 h2 20.2 0.795 l 21.5 22.3 0.846 0.878 l1 21.4 22.2 0.843 0.874 l2 17.4 18.1 0.685 0.713 l3 17.25 17.5 17.75 0.679 0.689 0.699 l4 10.3 10.7 10.9 0.406 0.421 0.429 l7 2.65 2.9 0.104 0.114 m 4.1 4.3 4.5 0.161 0.169 0.177 m1 4.88 5.08 5.3 0.192 0.200 0.209 s 1.9 2.6 0.075 0.102 s1 1.9 2.6 0.075 0.102 dia1 3.65 3.85 0.144 0.152 multiwatt 11 vertical package mechanical data 13/14 TDA1910
14/14 information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specification mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously s upplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems with out express written approval of sgs-thomson microelectronics. ? 1997 sgs-thomson microelectronics C printed in italy C all rights reserved sgs-thomson microelectronics group of companies australia - brazil - canada - china - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the n etherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a. TDA1910

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